近年來許多研究均致力於以矽材料為基礎之低維度奈米矽結構，以探討其在光激發下所造成的光發射機制。目前已開發許多技術和方法成長奈米矽嵌入氮化矽基材，然而通常必須在高溫中成長或經過後續的高溫熱處理才可以形成奈米矽，但高溫的處理過程會使電元件與光元件的特性退化。而雷射輔助電漿增強式化學氣相沉積方法可以在低溫且不必經過高溫熱處理的條件下，沉積奈米結晶矽嵌入氮化矽基材，並且可用此材料製作電激發光元件。

Recently, many efforts have been undertaken to study the optical emission mechanisms of lowdimensional Si nanostructures. Many techniques and methods have been developed to grow silicon nanoclusters embedded in silicon nitride matrices. However, the formation of silicon nanoclusters must be grown or post-annealed at a high temperature to precipitate the silicon nanoclusters. The high temperature process degrades the optical and electronic performance of the resultant devices. A laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) method has been used to deposit silicon nanoclusters embedded in silicon nitride matrices at a low temperature and without a post thermal annealing process. The feasibility of electroluminescence emission from these lightemitting devices was demonstrated.