III-V 族半導體中的氮化銦 (Indium nitride, InN) 在光電與電子元件中是具有相當潛力的材料，如高載子遷 移率、高漂移速度峰值、低電子質量與 0.65－0.7 eV 之能隙等優點。而目前大多數的 InN 樣品是使用分子 束磊晶 (MBE) 與有機金屬氣相沉積 (MOCVD) 方式製備，但受限於 InN 本身之物理性質，要成長高品質 InN 是具有挑戰性的，由於 InN 之熱裂解溫度約為 600 °C，無法於高溫中成長，因此目前成長高品質 InN 仍然是以 MBE 為主要鍍膜方法。本研究中使用的磊晶方式為電漿輔助化學束磊晶系統，可結合 MBE 與 MOCVD 兩者之優點成長 InN ，使用三甲基銦與電漿解離之氮原子做為 V 族與 III 族之來源，而影響 InN 結晶品質優劣的重要因子有基板種類、緩衝層、製程溫度與 V/III 流量比等。因此成長極性 InN 薄模，並 分析其結構與光電特性。實驗結果指出，在 V/III 流量比於 1.81 時有最佳結晶品質，其 (0002) 與 (10¯12) x-ray rocking curve 半高寬分別為 455 arcsec 與 1070 arcsec。由穿透式電子顯微鏡 (TEM) 之分析，可知 InN 與 GaN 緩衝層之磊晶關係為：(0002)InN//(0002)GaN 與 [11¯20]InN//[11¯20]GaN，並且 InN 中含有高密度之 基面疊差。另一方面，當 V/III 流量比約為 1.81 時， InN 有較高之沉積速率，約為 1.9  m/h，並且會隨著 V/III 流量比減少而增加。

Indium nitride is a III-V semiconductor which is potential for optoelectronics and electronics application due to its high electron mobility, high peak drift velocity, low effective electron mass and narrow bandgap of 0.65－0.7 eV. InN has been grown using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). It has been known that InN has a low dissociation temperature at 600 °C, such that the growth temperature is limited by the desorption of nitrogen and the thermal decomposition of the films. Therefore, the high-quality InN is usually obtained by using MBE. Various processing parameters may affect the quality of InN, such as substrate, buffer layer, substrate temperature, pressure, and V/III flow ratio. In this study, polar and semipolar InN films were prepared by plasma-assisted metal-organic molecular beam epitaxy (PA-MOMBE) which can have a high growth rate. Detailed characterizations of structural and optical properties of the grown polar InN films were carried out. The results indicated that In-polar InN films grown with the V/III ratio of ~1.81 has the smallest full width at half maximum (FWHM) value of 455 arcsec for (0002) X-ray rocking curve (XRC) andFWHMs value of 1070 arcsec for (10¯12). The epitaxial relationship of InN with GaN substrate is (0002)InN//(0002)GaN and [11¯20]InN//[11¯20]GaN as determined by selected area electron diffraction. Additionally, the InN growth rate decreases from 1.9 to 1.4  m/h when the ratio increases from 1.81 to 4.