先進長程演進計畫(Long term evolution advanced, LTE-A)利用載波聚合(Carrier aggregation, CA)技 術， 將多個子載波(Component carriers, CCs)結合，以達成高速傳輸通訊，為實現此種技術，在本文章中以0.18 μm金氧半互補式半導體製程(CMOS process)實現一載波聚合調變器，並以兩組頻寬為10 MHz的LTE-A訊號來測試此晶片之同頻帶(Intra-band)與跨頻帶(Inter-band)之載波聚合，其量測的輸出頻譜以及錯誤向量振幅(Error vector magnitude, EVM)符合LTE-A之需求。

LTE-Advanced uses carrier aggregation (CA) of multiple component carriers (CCs) to achieve high-bandwidth transmission. To fulfill such technology, the novel carrier -aggregated modulator structure is proposed. In this work, the carrier-aggregated modulator is implemented in 0.18 μm CMOS technology and tested with two 10 MHz LTE-Advanced Release 10 signals to demonstrate the feasibility of the proposed architecture in both the intra-band and inter-band CA. The measured output spectrum and EVM meet the LTE-Advanced requirements.