本文章主要針對需接收過電壓擺幅輸入輸出端(I/O PAD)之靜電放電防護提出一雙基體觸發雙向矽控整流器(DST-BISCR)與相關ESD偵測電路。其中雙基體觸發雙向矽控整流器藉由基體觸發(Substrate-triggered)技術達成。使用雙基體觸發技術能夠有效地降低雙向矽控整流器之觸發電壓(Vt1)，藉以有效地保護內部電路之薄閘極氧化層避免於遭受靜電放電(ESD)之損傷。依據實驗之結果，在此篇文章中所提出雙基體觸發雙向矽控整流器與傳統雙向矽控整流器比較具有較低之觸發電壓(4.31 V/-4.30 V)以及較高之二次崩潰電流(3.83 A/-3.82 A)。

In this work, a bi-directional SCR device with dual-substrate-triggered mechanism and related ESD detection circuit are proposed and verified for ESD protection for the extended-voltage-swing I/O application. The substrate-triggered technique is implemented to construct a dual-substrate-triggered mechanism and can further reduce the trigger voltage (Vt1) of the bi-directional SCR to protect the thin gate oxide against ESD
damages efficiently. According to the experimental results, the proposed dual-substrate-triggered bi-directional SCR (DST-BISCR) device has lower trigger voltage (Vt1: 4.31V/-4.30V) and higher secondary breakdown current (It2:3.83 A/-3.82 A) than other compared structures based on a 0.18-μm mixed-signal CMOS process.